| PART |
Description |
Maker |
| FCP9N60N FCPF9N60NT |
N-Channel SupreMOSMOSFET 600V, 9A, 385m
|
Fairchild Semiconductor
|
| FCP36N60N |
N-Channel SupreMOSMOSFET 600V, 36A, 90m
|
Fairchild Semiconductor
|
| FCPF7N60NT |
N-Channel SupreMOS? MOSFET 600 V, 6.8 A, 520 mΩ
N-Channel SupreMOSMOSFET 600V, 6.8A, 520m
|
Fairchild Semiconductor
|
| FCI25N60NF102 FCI25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 125m
N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
|
Fairchild Semiconductor
|
| FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQPF10N60C FQP10N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA10N60C |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STW16NB60 |
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMeshMOSFET N沟道600V 0.3ohm - 16A条，247 PowerMesh⑩MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh⑩ MOSFET
N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
